The Science and Technology of Magnetoresistive Tunneling Memory

IEEE Transactions on Nanotechnology

Volumn 1, Issue 1, 2002, Pages 32-37

  Engel, Brad N ^b   Rizzo, Nicholas D ^b   Janesky, Jason ^b   Slaughter, Jon M ^b   Dave, Renu ^b   Deherrera, Mark ^b   Durlam, Mark ^a,b   Tehrani, Saied ^a,b  

^a IEEE

^b MOTOROLA INC   (United States)

Author keywords

Magnetic film memories; Magnetic tunnel junction; Magnetoresistive device; Magnetoresistive random access memory (MRAM); Micromagnetic switching; MRAM integration; Random access memories (RAMs)

Indexed keywords

COMPUTATION THEORY; DATA STORAGE EQUIPMENT; ELECTRON TUNNELING; MAGNETORESISTANCE; RANDOM ACCESS STORAGE;

MAGNETIC FILM MEMORIES; MAGNETIC TUNNEL JUNCTION; MAGNETORESISTIVE DEVICES; MAGNETORESISTIVE RANDOM ACCESS MEMORY (MRAM); MICROMAGNETIC SWITCHING; MRAM INTEGRATION;

NANOTECHNOLOGY;

EID: 0042141258     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2002.1005424     Document Type: Article

References (14)

1. W. J. Oallagher, S. S. P. Parkin, Y. Lu, X. P. Bian, A. Marley, R. A. Altman, S. A. Rishton, K. P. Roche, C. Jahnes, T. M. Shaw, and G. Xiao, "Microstructured magnetic tunnel junctions," J. Appl. Phys., vol. 81, pp. 3741-3746, 1997.
2. S. Tehrani, J. M. Slaughter, E. Chen, M. Durlam, J. Shi, and M. DeHerrera, "Progress and outlook for MRAM technology," IEEE Trans. Magn., pt. 1, vol. 35, pp. 2814-2819, Sept. 2000.
3. P. K. Naji, M. Durlam, S. Tehrani, J. Calder, and M. F. DeHerrera, "A 256 kb 3.0 V 1T1MTJ nonvolatile magnetoresistive RAM," in Proc. IEEE ISSCC Dig. Tech. Papers, vol. 44, Feb. 2001, pp. 122-123.
4. 3/Fe junction," J. Magn. Magn. Mater., vol. 139, p. L231, 1995.
5. S. S. P. Parkin, K. P. Roche, M. G. Samant, P. M. Rice, R. B. Beyers, and R. E. Scheuerlein, "Exchange-biased magnetic tunnel junctions and application to nonvolatile magnetic random access memory," J. Appl. Phys., vol. 85, p. 3741, 1999.
6. E. Y. Chen, R. Whig, J. M. Slaughter, D. Cronk, J. Goggin, G. Steiner, and S. Tehrani, "Comparison of oxidation methods for magnetic tunnel junction material," J. Appl. Phys., vol. 87, pp. 6061-6063, 2000.
7. R. O'Handley, Modem Magnetic Materials: Principles and Applications. New York: Wiley, 1999.
8. J. Shi, T. Zhu, M. Durlam, E. Chen, S. Tehrani, Y. F. Zheng, and J.-G. Zhu, "End domain states and magnetization reversal in submicron magnetic structures," IEEE Trans. Magn., pt. 1, vol. 34, p. 997, July 1998.
9. J. Shi, S. Tehrani, T. Zhu, Y. F. Zheng, and J. G. Zhu, "Magnetization vortices and anomalous switching in patterned NiFeCo submicron arrays," Appl. Phys. Lett., vol. 74, pp. 2525-2527, 1999.
10. J. Shi, S. Tehrani, and M. Scheinfein, "Geometry dependence of magnetization vortices in patterned submicron NiFe elements," Appl. Phys. Lett., vol. 76, pp. 2588-2590, 2000.
11. J. Janesky, N. D. Rizzo, L. Savtchenko, B. Engel, J. M. Slaughter, and S. Tehrani, "Magnetostatic interactions between submicrometer patterned magnetic elements," IEEE Trans. Mag., pt. 1, vol. 37, p. 2052, July 2001.
12. N. D. Rizzo, M. DeHerrera, J. Janesky, B. N. Engel, J. M. Slaughter, and S. Tehrani, "Thermally activated magnetization in submicron magnetic structures for MRAM," Appl. Phys. Lett., vol. 80, pp. 2335-2337, 2002.
13. M. Durlam, P. Naji, M. DeHerrera, S. Tehrani, G. Kerszykowski, and K. Kyler, "Nonvolatile RAM based on magnetic tunnel junction elements," in Proc. IEEE ISSCC Dig. Tech. Papers, vol. 43, Feb. 2000, p. 128.
14. J. Shi and S. Tehrani, "Edge pinned states in patterned submicron ultra-thin film magnetic structures," Appl. Phys. Lett., vol. 77, pp. 1692-1694, 2000.