Low-power circuits for a 2.5-V, 10.7-to-86-Gb/s serial transmitter in 130-nm SiGe BiCMOS

IEEE Journal of Solid-State Circuits

Volumn 42, Issue 10, 2007, Pages 2077-2085

  Dickson, Timothy O ^a,b,c   Voinigescu, Sorin P ^a,b  

^a IEEE

^b UNIVERSITY OF TORONTO   (Canada)

^c IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

100 G ethernet; BiCMOS; CML; Colpitis VCO; Inductors; Multiplexer; Serial transmitter; SiGe HBT

Indexed keywords

BICMOS TECHNOLOGY; ELECTRIC INDUCTORS; ELECTRIC POWER UTILIZATION; EMITTER COUPLED LOGIC CIRCUITS; ETHERNET; HETEROJUNCTION BIPOLAR TRANSISTORS;

LOW-POWER CIRCUITS; OFF TAIL CURRENTS; SERIAL TRANSMITTER; SILICON TECHNOLOGIES;

TRANSMITTERS;

EID: 34748815546     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSSC.2007.904152     Document Type: Conference Paper

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