H+ and D+ associated charge buildup during annealing of Si/SiO2/Si structures

Journal of Non-Crystalline Solids

Volumn 216, Issue , 1997, Pages 116-123

  Vanheusden, K ^a   Warren, W L ^a   Devine, R A B ^b  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b ORANGE LABS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANNEALING; CHEMICAL BONDS; ELECTRIC CHARGE; ELECTRIC FIELD EFFECTS; ELECTRONS; HIGH TEMPERATURE EFFECTS; HYDROGEN; INTERFACES (MATERIALS); PROTONS; SEMICONDUCTING SILICON; SILICA;

DEUTERONS; MASS FACTOR;

HETEROJUNCTIONS;

EID: 0031211050     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(97)00178-6     Document Type: Article

References (8)

1. S.M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981) ch. 8.
2. K. Brower, Phys. Rev. B42 (1992) 3444.
3. E. Cartier, J.H. Stathis, D.A. Buchanan, Appl. Phys. Lett. 63 (1993) 1510.
4. 2 Interface, Vol. 3, ed. H. Massoud, E.H. Poindexter and C.R. Helms (The Electrochemical Society, Pennington, NJ, 1996) p. 525.
5. N.S. Saks, D.B. Brown, IEEE Trans. Nucl. Sci. NS36 (1989) 1848.
6. D.B. Brown, N.S. Saks, J. Appl. Phys. 70 (1991) 3734.
7. N.S. Saks, R.W. Rendell, IEEE Trans. Nucl. Sci. 39 (1992) 2220.
8. S. Cristoloveanu, S.S. Li, in: Electrical Characterisation of Silicon on Insulator Materials and Devices (Kluwer Academic, Boston, MA, 1995) p. 104.