Vox/Eox-driven breakdown of ultra-thin SiON gate dielectric in p+gate-pMOSFET under low stress voltage of inversion mode

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2005, Pages 366-371

  Tsujikawa, Shimpei ^a,b   Shiga, Katsuya ^a,b   Umeda, Hiroshi ^a,b   Akamatsu, Yasuhiko ^a,b   Yugami, Jiro ^a,b   Ohno, Yoshikazu ^a,b   Yoneda, Masahiro ^a,b  

^a RENESAS TECHNOLOGY CORP   (Japan)

^b Development Dept   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GATE VOLTAGE; HOLES; OXIDE VOLTAGE; STRESS VOLTAGE;

CMOS INTEGRATED CIRCUITS; DIELECTRIC MATERIALS; DOPING (ADDITIVES); ELECTRIC POTENTIAL; ELECTRONS; SILICON; STRESS ANALYSIS;

MOSFET DEVICES;

EID: 28744445151     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (16)

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