Dielectric breakdown in SiO2 via electric field induced attached hydrogen defects

Microelectronic Engineering

Volumn 80, Issue SUPPL., 2005, Pages 174-177

  Tahir Kheli, Jamil ^a   Miyata, M ^b   Goddard III, W A ^a  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^b SEIKO EPSON CORPORATION   (Japan)

Author keywords

Dielectric breakdown; Electric field; First Principles calculation; Hydrogen defects; Thin gate oxide

Indexed keywords

CHEMICAL BONDS; ELECTRIC FIELDS; ELECTRIC POTENTIAL; HYDROGEN; OPTIMIZATION; OXYGEN; POLARIZATION; SILICA; SILICON; THERMOANALYSIS;

DIELECTRIC BREAKDOWN; FIRST PRINCIPLES CALCULATIONS; HYDROGEN DEFECTS; THIN GATE OXIDES;

ELECTRIC BREAKDOWN;

EID: 19944373423     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.04.031     Document Type: Conference Paper

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