Measurement of the interface trap and dielectric charge density in high-κ gate stacks

IEEE Transactions on Device and Materials Reliability

Volumn 5, Issue 1, 2005, Pages 109-112

  Neugroschel, Arnost ^a   Bersuker, Gennadi ^b  

^a University of Florida   (United States)

^b SEMATECH   (United States)

Author keywords

Dielectrics; High ; High Si interface; Interface traps; MOSFETs

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC MATERIALS; ELECTRIC CHARGE; ELECTRIC CURRENTS; ELECTRIC VARIABLES MEASUREMENT; ELECTRON TRAPS; INTERFACES (MATERIALS); MOSFET DEVICES;

DIRECT-CURRENT CURRENT-VOLTAGE (DCIV) TECHNIQUE; HIGH-Κ DIELECTRICS; HIGH-Κ/SI INTERFACE; INTERFACE TRAPS; MOSFETS;

GATES (TRANSISTOR);

EID: 20444493998     PISSN: 15304388     EISSN: None     Source Type: Journal    
DOI: 10.1109/TDMR.2005.845881     Document Type: Article

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