Structural and optical properties of an InxGa1-xN/GaN nanostructure

Surface Science

Volumn 601, Issue 18, 2007, Pages 3892-3897

  Korçak, Sabit ^a   Öztürk, M Kemal ^a   Çörekçi, Süleyman ^a   Akaoǧlu, Bariş ^a   Yu, Hongbo ^b   Çakmak, Mehmet ^a   Saǧlam, Semran ^a   Özçelik, Süleyman ^a   Özbay, Ekmel ^b  

^a GAZI UNIVERSITY   (Turkey)

^b BILKENT UNIVERSITY   (Turkey)

Author keywords

Atomic force microscopy; Ellipsometry; InxGa1 xN GaN; Metalorganic chemical vapor deposition; Photoluminescence; X ray reflectivity

Indexed keywords

ATOMIC FORCE MICROSCOPY; BUFFER LAYERS; EPILAYERS; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NANOSTRUCTURES; NUCLEATION; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SPECTROSCOPIC ELLIPSOMETRY; X RAY DIFFRACTION;

BLUE EMISSION; DIELECTRIC FUNCTION SPECTRUM; ROOM TEMPERATURE; X-RAY REFLECTIVITY;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 34548667969     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2007.04.088     Document Type: Article

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