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Volumn 601, Issue 18, 2007, Pages 3892-3897

Structural and optical properties of an InxGa1-xN/GaN nanostructure

Author keywords

Atomic force microscopy; Ellipsometry; InxGa1 xN GaN; Metalorganic chemical vapor deposition; Photoluminescence; X ray reflectivity

Indexed keywords

ATOMIC FORCE MICROSCOPY; BUFFER LAYERS; EPILAYERS; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NANOSTRUCTURES; NUCLEATION; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SPECTROSCOPIC ELLIPSOMETRY; X RAY DIFFRACTION;

EID: 34548667969     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2007.04.088     Document Type: Article
Times cited : (12)

References (29)
  • 17
    • 0004040706 scopus 로고
    • Aspnes D.E., and Palik E.D. (Eds), Academic Press, Orlando
    • In: Aspnes D.E., and Palik E.D. (Eds). Handbook of Optical Constants of Solids (1985), Academic Press, Orlando 89
    • (1985) Handbook of Optical Constants of Solids , pp. 89
  • 19
    • 34548694525 scopus 로고    scopus 로고
    • LEPTOS User Manual (www.bruker-axs.de), Version 2 (2004).


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.