Investigation of the interface properties of MOVPE grown AlGaN/GaN high electron mobility transistor (HEMT) structures on sapphire

Thin Solid Films

Volumn 515, Issue 2 SPEC. ISS., 2006, Pages 705-707

  Aggerstam, T ^a   Lourdudoss, S ^a   Radamson, H H ^a   Sjodin M ^a   Lorenzini, P ^b   Look, D C ^c  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b CHREA CNRS   (France)

^c WRIGHT STATE UNIVERSITY   (United States)

Author keywords

Dislocations; HEMT; Interface roughness; MOVPE; Scattering; X Ray reflectivity

Indexed keywords

ALUMINUM COMPOUNDS; ELECTRON MOBILITY; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; METALLORGANIC VAPOR PHASE EPITAXY; SCATTERING; SURFACE ROUGHNESS;

DISLOCATIONS; HALL MOBILITIES; INTERFACE ROUGHNESS; X-RAY REFLECTIVITY;

TRANSISTORS;

EID: 33748909151     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2006.04.052     Document Type: Article

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