Improved AlGaN/GaN high electron mobility transistor using AlN interlayers

Applied Physics Letters

Volumn 82, Issue 26, 2003, Pages 4827-4829

  Jimenez A ^a   Bougrioua, Z ^b   Tirado, J M ^a   Brana A F ^a   Calleja, E ^a   Munoz E ^a   Moerman, I ^c  

^a UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

^b CRHEA CNRS   (France)

^c GHENT UNIVERSITY   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; CARRIER CONCENTRATION; COMPUTER SIMULATION; ELECTRIC POTENTIAL; HETEROJUNCTIONS; INSULATING MATERIALS; MOLECULAR STRUCTURE; OPTICAL PROPERTIES; RELAXATION PROCESSES; SEMICONDUCTING ALUMINUM COMPOUNDS;

CHANNEL CARRIER DENSITY; PLASTIC RELAXATION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0038105264     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1588379     Document Type: Article

References (6)

1. H. Amano, M. Iwaya, T. Kashima, M. Katsuragawa, I. Akasaki, J. Han, S. Hearne, J. A. Floro, E. Chason, and J. Figiel, Jpn. J. Appl. Phys. 37, L1540 (1998).
2. Z. Bougrioua, I. Moerman, L. Nistor, B. Van Daele, E. Monroy, T. Palacios, F. Calle, and M. Leroux, Phys. Status Solidi A 195, 93 (2003).
3. W. Shan, A. J. Fischer, S. J. Hwang, B. D. Little, R. J. Hauenstein, X. C. Xie, J. J. Song, D. S. Kim, B. Goldenberg, R. Horning, S. Krishnankutty, W. G. Perry, M. D. Bremser, and R. F. Davis, J. Appl. Phys. 83, 455 (1998).
4. O. Brandt, P. Waltereit, and K. H. Ploog, J. Phys. D 35, 577 (2002).
5. O. Ambacher, J. Majewski, C. Miskys, A. Link, M. Hermann, M. Eickhoff, M. Stutzmann, F. Bernardini, V. Florentini. V. Tilak, B. Schaff, and L. F. Eastman, J. Phys.: Condens. Matter 14, 3399 (2002).
6. G. Snider, ID Poisson Band Diagram Calculator, University of Notre Dame, www.nd.edu/∼gsnider/