Electrical characterization of high-k gate dielectrics fabricated using plasma oxidation and post-deposition annealing of a Hf/SiO2/Si structure

Materials Science in Semiconductor Processing

Volumn 9, Issue 6, 2006, Pages 1031-1036

  Sugimoto, Youhei ^a   Adachi, Hideto ^a   Yamamoto, Keisuke ^a   Wang, Dong ^a   Nakashima, Hideharu ^a   Nakashima, Hiroshi ^a  

^a KYUSHU UNIVERSITY   (Japan)

Author keywords

HfO2; High k dielectrics; Interfacial layer

Indexed keywords

ANNEALING; CURRENT DENSITY; DIELECTRIC FILMS; LEAKAGE CURRENTS; OXIDATION; PERMITTIVITY; SILICA;

HFO2; HIGH-K DIELECTRICS; INTERFACIAL LAYERS; PLASMA OXIDATION;

DIELECTRIC MATERIALS;

EID: 33846067228     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2006.10.020     Document Type: Article

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