Influence of N 2 flow ratio on the properties of hafnium nitride thin films prepared by DC magnetron sputtering

Applied Surface Science

Volumn 253, Issue 20, 2007, Pages 8538-8542

  Yuan, Longyan ^a,b   Fang, Guojia ^a,b   Li, Chun ^a   Wang, Mingjun ^a   Liu, Nishuang ^a   Ai, Lei ^a   Cheng, Yanzhao ^a   Gao, Huimin ^a   Zhao, Xingzhong ^a  

^a BEIJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

^b SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

Author keywords

Crystal structure; Hafnium nitride; Reactive magnetron sputtering; Semiconducting materials

Indexed keywords

CRYSTAL STRUCTURE; FUSED SILICA; HAFNIUM COMPOUNDS; MAGNETRON SPUTTERING; NITROGEN; SEMICONDUCTOR MATERIALS; X RAY DIFFRACTION;

FOUR-POINT PROBE METHOD; HAFNIUM NITRIDE; POSITIVE TEMPERATURE COEFFICIENTS; REACTIVE MAGNETRON SPUTTERING;

THIN FILMS;

EID: 34548527721     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2007.04.024     Document Type: Article

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