Work function tuning of metal nitride electrodes for advanced CMOS devices

Thin Solid Films

Volumn 504, Issue 1-2, 2006, Pages 174-177

  Ren, C ^a,b   Faizhal, B B ^a   Chan, D S H ^a   Li, M F ^a,b   Yeo, Y C ^a   Trigg, A D ^b   Balasubramanian, N ^b   Kwong, D L ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

Lanthanide; Metal gate electrode; Metal nitride; Work function tuning

Indexed keywords

CMOS INTEGRATED CIRCUITS; LANTHANUM COMPOUNDS; MOSFET DEVICES; NITRIDES; RAPID THERMAL ANNEALING; THERMODYNAMIC STABILITY;

METAL GATE ELECTRODE; METAL NITRIDE; WORK FUNCTION TUNING;

ELECTRODES;

EID: 33644880788     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.09.081     Document Type: Conference Paper

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