Growth and physical properties of epitaxial HfN layers on MgO(001)

Journal of Applied Physics

Volumn 96, Issue 1, 2004, Pages 878-884

  Seo, H S ^a   Lee, T Y ^a   Wen, J G ^a   Petrov, I ^a   Greene, J E ^a   Gall, D ^b  

^a University of Illinois at Urbana Champaign   (United States)

^b RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC TRANSPORT; PHONON SCATTERING; ROOM-TEMPERATURE; ULTRAHIGH VACCUM (UHV);

CARRIER CONCENTRATION; ELASTIC MODULI; ELECTRON MOBILITY; EPITAXIAL GROWTH; LATTICE CONSTANTS; MAGNESIA; MAGNETRON SPUTTERING; PHYSICAL PROPERTIES; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SINGLE CRYSTALS; STOICHIOMETRY; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

HAFNIUM COMPOUNDS;

EID: 3142773752     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1759783     Document Type: Article

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