Surface reaction of trimethylgallium on GaAs

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 14, Issue 1, 1996, Pages 136-146

  Nishizawa, Jun Ichi ^a,b   Sakuraba, Hiroshi ^a   Kurabayashi, Toru ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b SEMICONDUCTOR RESEARCH INSTITUTE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000195677     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589016     Document Type: Article

References (21)

1. J. Nishizawa and Y. Kokubun, in Extended Abstracts of the 16th Conference on Solid State Devices and Materials (The Japan Society of Applied Physics, Kobe, Japan, 1984), p. 1.
2. J. Nishizawa, H. Abe, and T. Kurabayashi, J. Electrochem. Soc. 132, 1197 (1985).
3. T. Suntola, U. S. Patent No. 4058430 (1977).
4. M. Ahonen, M. Pessa, and T. Suntola, Thin Solid Films 65, 301 (1980).
5. J. Nishizawa, T. Kurabayashi, H. Abe, and A. Nozoe, Surf. Sci. 185, 249 (1987).
6. J. Nishizawa, K. Aoki, S. Suzuki, and K. Kikuchi, J. Electrochem. Soc. 137, 1898 (1990).
7. J. Nishizawa, K. Aoki, S. Suzuki, and K. Kikuchi, J. Cryst. Growth 99, 502 (1990).
8. J. Nishizawa and H. Nihira, J. Cryst. Growth 45, 82 (1978).
9. J. Nishizawa, T. Kurabayashi, and Y. Iwasaki, Colloids Surf. 38, 103 (1989).
10. B. Y. Maa and P. D. Dapkus, Thin Solid Films 225, 12 (1993).
11. I. Kamiya, D. E. Aspnes, H. Tanaka, L. T. Florez, J. P. Harbison, and R. Bhat, Phys. Rev. Lett. 68, 627 (1992).
12. N. Kobayashi, Y. Yamauchi, and Y. Horikoshi, J. Cryst. Growth 115, 353 (1991).
13. K. Kodama, M. Ozeki, K. Mochizuki, and N. Ohotsuka, Appl. Phys. Lett. 54, 666 (1989).
14. H. Ishii, H. Ohono, K. Matsuzaki, and H. Hasegawa, J. Cryst. Growth 95, 132 (1989).
15. M. L. Yu, U. Memmert, and T. F. Kuech, Appl. Phys. Lett. 55, 1011 (1989).
16. J. Nishizawa, H. Sakuraba, and Y. Oyama, Thin Solid Films 225, 1 (1993).
17. P. A. Taylor, R. M. Wallace, W. J. Choyke, M. J. Dresser, and J. T. Yates, Jr., Surf. Sci. 215, 1286 (1989).
18. V. S. Smentkowski and J. T. Yates, Jr., J. Vac. Sci. Technol. A 7, 3325 (1989).
19. R. E. Honig, J. Chem. Phys. 16, 105 (1948).
20. W. A. Chupka and M. G. Inghram, J. Chem. Phys. 21, 21 (1953).
21. J. Nishizawa and T. Kurabayashi, in Proceedings of the Symposium on Dry Process, Electronics and Dielectronics and Insulation Divisions (The Electrochemical Society, New York, 1987), No. 88-7, p. 194.