Impact excitation by hot carriers in carbon nanotubes

Physical Review B - Condensed Matter and Materials Physics

Volumn 74, Issue 12, 2006, Pages

  Perebeinos, Vasili ^a   Avouris, Phaedon ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33749165296     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.74.121410     Document Type: Article

References (23)

1. Ph. Avouris, MRS Bull. MRSBEA 0883-7694 29, 403 (2004).
2. J. A. Misewich, R. Martel, Ph. Avouris, J. C. Tsang, S. Heinze, and J. Tersoff, Science SCIEAS 0036-8075 10.1126/science.1081294 300, 783 (2003).
3. M. Freitag, V. Perebeinos, J. Chen, A. Stein, J. Tsang, J. Misewich, R. Martel, and Ph. Avouris, Nano Lett. NALEFD 1530-6984 10.1021/nl049607u 4, 1063 (2004).
4. M. Freitag, J. Chen, J. Tersoff, J. C. Tsang, Q. Fu, J. Liu, and Ph. Avouris, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.93.076803 93, 076803 (2004).
5. J. Chen, V. Perebeinos, M. Freitag, J. Tsang, Q. Fu, J. Liu, Ph. Avouris, Science SCIEAS 0036-8075 10.1126/science.1119177 310, 1171 (2005).
6. L. Marty, E. Adam, L. Albert, R. Doyon, D. Ménard, and R. Martel, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.96.136803 96, 136803 (2006).
7. T. Ando, J. Phys. Soc. Jpn. JUPSAU 0031-9015 10.1143/JPSJ.66.1066 66, 1066 (1997).
8. C. D. Spataru, S. Ismail-Beigi, L. X. Benedict, and S. G. Louie, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.92.077402 92, 077402 (2004).
9. V. Perebeinos, J. Tersoff, and Ph. Avouris, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.92.257402 92, 257402 (2004).
10. F. Wang, G. Dukovic, L. E. Brus, and T. F. Heinz, Science SCIEAS 0036-8075 10.1126/science.1110265 308, 838 (2005).
11. J. Maultzsch, R. Pomraenke, S. Reich, E. Chang, D. Prezzi, A. Ruini, E. Molinari, M. S. Strano, C. Thomsen, and C. Lienau, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.72.241402 72, 241402 (R) (2005).
12. X. Qiu, M. Freitag, V. Perebeinos, P. Avouris, Nano Lett. NALEFD 1530-6984 10.1021/nl050227y 5, 749 (2005).
13. We compare rates 0.5 eV above the threshold with those in bulk semiconductors used in Monte Carlo simulations. See, for example, A. Kuligk, N. Fitzer, and R. Redmer, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.71.085201 71, 085201 (2005).
14. Z. Yao, C. L. Kane, and C. Dekker, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.84.2941 84, 2941 (2000).
15. A. Javey, J. Guo, M. Paulsson, Q. Wang, D. Mann, M. Lundstrom, and H. Dai, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.92.106804 92, 106804 (2004).
16. J. Y. Park, S. Rosenblatt, Y. Yaish, V. Sazonova, H. Ustunel, S. Braig, T. A. Arias, P. Brouwer, and P. L. McEuen, Nano Lett. NALEFD 1530-6984 10.1021/nl035258c 4, 517 (2004).
17. V. Perebeinos, J. Tersoff, and Ph. Avouris, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.94.086802 94, 086802 (2005).
18. M. Lazzeri, S. Piscanec, F. Mauri, A. C. Ferrari, and J. Robertson, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.95.236802 95, 236802 (2005).
19. E. Pop, D. Mann, J. Cao, Q. Wang, K. Goodson, and H. Dai, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.95.155505 95, 155505 (2005).
20. P. T. Landsberg, Recombination in Semiconductors (Cambridge University Press, Cambridge, U.K., 1991).
21. E. K. Chang and E. L. Shirley, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.66.035106 66, 035106 (2002).
22. G. Dukovic, F. Wang, D. Song, M. Y. Sfeir, T. F. Heinz, and L. E. Brus, Nano Lett. NALEFD 1530-6984 10.1021/nl0518122 5, 2314 (2005).
23. V. Perebeinos, J. Tersoff, and Ph. Avouris, Nano Lett. NALEFD 1530-6984 10.1021/nl051828s 5, 2495 (2005).