Ammonium hydroxide effect on low-temperature wafer bonding energy enhancement

Electrochemical and Solid-State Letters

Volumn 8, Issue 3, 2005, Pages

  Chao, Y L ^a,b   Tong, Q Y ^a,d   Lee, T H ^a,e   Reiche, M ^c   Scholz, R ^c   Woo, J C S ^b   Gosele U ^a,c  

^a Duke University   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^d Ziptronix Inc   (United States)

^e NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BINDING ENERGY; BOND STRENGTH (CHEMICAL); CHEMICAL BONDS; CRYOGENICS; GERMANIUM; HYDROPHILICITY; MICROELECTROMECHANICAL DEVICES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLARIZATION; SILICON WAFERS; THERMOOXIDATION;

AMMONIUM HYDROXIDES; BONDING ENERGY; HYDROPHILIC GERMANIUM; WAFERS;

AMMONIUM COMPOUNDS;

EID: 15744385066     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1857671     Document Type: Article

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