A technique to study the lattice location of hydrogen atoms in silicon by channeling elastic recoil detection analysis

Applied Physics Letters

Volumn 87, Issue 13, 2005, Pages 1-3

  Shao, Lin ^a   Wang, Yongqiang ^a   Lee, J K ^a   Nastasi, M ^a   Thompson, Phillip E ^b   Theodore, N David ^c   Mayer, J W ^d  

^a LOS ALAMOS NATIONAL LABORATORY   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

^c FREESCALE SEMICONDUCTOR INC   (United States)

^d AZ 85281   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BORON DOPED LAYERS; FORWARD SCATTERED H1 PERMITS;

BORON; DOPING (ADDITIVES); HYDROGENATION; SCATTERING; SILICON;

HYDROGEN;

EID: 28444477380     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2058200     Document Type: Article

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