Confining P diffusion in Si by an As-doped barrier layer

Applied Physics Letters

Volumn 91, Issue 6, 2007, Pages

  Bai, Lugang ^a   Yu, Decai ^a   Lu, Guang Hong ^a   Liu, Feng ^a   Wang, Q ^b   Yilmaz, Hamza ^b  

^a UNIVERSITY OF UTAH   (United States)

^b FAIRCHILD SEMICONDUCTOR   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION; ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; SEMICONDUCTOR DOPING; SILICON WAFERS; VACANCIES;

DIFFUSION BARRIER; FIRST-PRINCIPLES CALCULATIONS; SI-BASED DEVICES;

SILICON;

EID: 34547850746     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2769392     Document Type: Article

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