Codoping of wide gap epitaxial III-Nitride semiconductors

Opto-Electronics Review

Volumn 10, Issue 4, 2002, Pages 243-249

  Korotkov, R Y ^a   Gregie, J M ^a   Wessels, B W ^a  

^a NORTHWESTERN UNIVERSITY   (United States)

Author keywords

Codoping; GaN; p type conductivity

Indexed keywords

EID: 0242534902     PISSN: 12303402     EISSN: 18963757     Source Type: Journal    
DOI: None     Document Type: Article

References (27)

1. W. Walukiewicz, "Intrinsic limitations to the doping of wide-gap semiconductors", Physica B302-303, 123-134 (2001).
2. S. Nakamura, "Si-doped and Ge-doped GaN films grown with GaN buffer layers", Jpn. J. Appl. Phys. 31, 2883-2888 (1992).
3. G.C. Yi and B.W. Wessels, "Compensation of n-type GaN", Appl. Phys. Lett. 69, 3028-3030 (1996).
4. R.Y. Korotkov and B.W. Wessels, "Electrical properties of oxygen doped GaN grown by metalorganic vapour phase epitaxy", MRS Internet J. Nitride Semicond. Res. 5S1, W3.80 (2000).
5. U. Kaufmann, P. Schlotter, H. Obloh, K. Kohler, and M. Maier, "Hole conductivity and compensation in epitaxial GaN;Mg layers", Phys. Rev. B62, 10867-10872 (2000).
6. R.Y. Korotkov, J.M. Gregie, and B.W. Wessels, "Electrical properties of p-type GaN:Mg codoped with oxygen", Appl. Phys. Lett. 78, 222-224 (2001).
7. S. Nakamura, N. Iwasa, M. Senoh, and T. Mukai, "Hole compensation mechanism of p-type GaN films", Jpn. J. Appl. Phys. 31, 1258-1266 (1992).
8. C.G. Van de Walle, C. Stampfl, and J. Neugebauer, "Theory of doping and defects in III-V nitrides", J. Cryst. Growth 189-190, 505-510 (1998).
9. S.B. Zhang, S.H. Wei, and A. Zunger, "Microscopic origin of the phenomenological equilibrium 'doping limit rule' in n-type III-V semiconductors", Phys. Rev. Lett. 84, 1232-1235 (2000).
10. U. Kaufmann, M. Kunzer, M. Maier, H. Obloh, A. Ramakrishnan, and B. Santic, "Nature of the 2.8 eV photoluminescence band in Mg doped GaN", Appl. Phys. Lett. 72, 1326-1328 (1998).
11. F. Shahedipour and B.W. Wessels, "Investigation of the formation of the 2.8 eV luminescence band in p-type GaN:Mg", Appl. Phys. Lett. 76, 3011-3013 (2000).
12. H. Reiss, C.S. Fuller, and F.J. Morin, "Chemical interactions among defects in germanium and silicon", Bell Syst. Tech. J. 35, 535-636 (1956).
13. H. Reiss, C.S. Fuller, and A.J. Pietruszkievicz, "Solubility of lithium in doped and undoped silicon, evidence for compound formation", J. Chem. Phys. 25, 650-655 (1956).
14. J.A. Van Vechten, J.D. Zook, R.D. Horning, and B. Goldenberg, "Defeating compensation in wide gap semi-conductors by growing in H that is removed by low temperature de-ionising radiation", Jpn. J. Appl. Phys. 31, 3662-3663 (1992).
15. H. Katayama-Yoshida, R. Kato, and T. Yamamoto, "New valence control and spin control method in GaN and AlN by codoping and transition atom doping", J. Cryst. Growth 231, 428-436 (2001).
16. J.I. Pankove, J.T. Torvik, C.H Qiu, I. Grzegory, S. Porowski, P. Quigley, and B. Martin, "Molecular doping of gallium nitride", Appl Phys. Lett. 74, 416-418 (1999).
17. K. Ploog and O. Brandt, "Doping of group III nitrides", J. Vac. Sci. Technol A16, 1609-1614, Part 2 (1998).
18. S. Nakamura, Applied to Japanese Patent, JP H8-296872 [Pub. In JP H10-144960] and JP H8-313442 [Pub. in JP H10-154829].
19. 1-xN (0< ×<0.08)", Appl. Phys. Lett. 80, 2910-2912 (2002).
20. K.S. Kim, C.S. Oh, M.S. Han, C.S. Kim, G.M. Yang, C.H. Hong, C.J. Youn, K.Y. Lim, and H.J. Lee, "Co-doping characteristics of Si and Zn with Mg in p-type GaN", MRS Internet J. Nitride Semicond. Res. 5S1, W3.84 (2000).
21. R.A. Swalin, Thermodynamics of Solids, Wiley, New York, 1972.
22. S.C. Jain, M. Willander, J. Narayan, and R. Van Overstraeten, "III-nitrides: Growth, characterisation, and properties", J. Appl. Phys. 87, 965-1006 (2000).
23. D.C. Look, Electrical Characterisation of GaAs Materials and Devices, Wiley, New York, 1989.
24. U. Kaufmann, M. Kunzer, M. Maier, H. Obloh, A. Ramakrishnan, B. Santic, and P. Schlotter, "Nature of the 2.8 eV photoluminescence band in Mg doped GaN", Appl. Phys. Lett. 72, 1326-1328 (1998).
25. R.Y. Korotkov, J.M. Gregie, and B.W. Wessels, "Photoluminescence studies of p-type GaN:Mg co-doped with oxygen", Mater. Res. Soc. Symp. Proc. 639, G6.39.1-5 (2001).
26. Y. Marfaing, "Phenomenological analysis of codoping role of statistical fluctuations", Phys. Stat. Sol. B229, 229-238 (2002).
27. S.H. Chung, M. Lachab, T. Wang, Y. Lacroix, D. Basak, Q. Fareed, Y. Kawakami, K. Nishino, and S. Sakai, "Effect of oxygen on the activation of Mg acceptor in GaN epilayers grown by metalorganic chemical vapour deposition", Jpn. J. Appl. Phys. 39, 4749-4750, Part 1 (2000).