Atomistic simulation of ion channeling in heavily doped Si:As

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 230, Issue 1-4, 2005, Pages 112-117

  Satta, A ^a   Albertazzi, E ^a   Bianconi, M ^a   Lulli, G ^a   Balboni, S ^b   Colombo, L ^c  

^a CNR   (Italy)

^b UNIVERSITY OF BOLOGNA   (Italy)

^c UNIVERSITY OF CAGLIARI   (Italy)

Author keywords

Atomic location of impurities; Ion channeling; Monte Carlo simulation; Vacancy As complexes

Indexed keywords

ABSORPTION; ANISOTROPY; ARSENIC COMPOUNDS; COMPLEXATION; DEFECTS; DOPING (ADDITIVES); IMPURITIES; IONS; MONTE CARLO METHODS; RAMAN SCATTERING; RELAXATION PROCESSES; RUTHENIUM; SILICON COMPOUNDS;

ATOMIC LOCATION OF IMPURITIES; DENSITY FUNCTIONAL THEORY (DFT); ION CHANNELING; LATTICE DISTORTION; LOCAL DENSITY APPROXIMATION (LDA); VACANCY-AS COMPLEXES;

ATOMIC PHYSICS;

EID: 14744285982     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2004.12.027     Document Type: Conference Paper

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