P and B single- and co-doped silicon nanocrystals: Formation and activation energies, electronic and optical properties

2005 IEEE International Conference on Group IV Photonics

Volumn 2005, Issue , 2005, Pages 60-62

  Ossicini, Stefano ^a   Iori, Federico ^a   Degoli, Elena ^a   Luppi, Eleonora ^a   Magri, Rita ^a   Cantele, G ^b   Trani, F ^b   Ninno, D ^b  

^a UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^b UNIVERSITY OF NAPLES FEDERICO II   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; DOPING (ADDITIVES); ELECTRONIC PROPERTIES; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SILICON;

INVERSE RADIUS; SILICON NANOCRYSTALS;

NANOSTRUCTURED MATERIALS;

EID: 33746859415     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/GROUP4.2005.1516403     Document Type: Conference Paper

References (6)

1. S. Ossicini, L. Pavesi, F. Priolo, "Light Emitting Silicon for Microphotonics", STMP 194, Springer-Berlin (2003).
2. G. Cantele et al., Phys. Rev. Lett, submitted.
3. D.V. Melnikov and J. R. Chelikowsky, Phys. Rev. Lett. 92, 046802 (2004).
4. S. Ögüt, R. Burdick, Y. Saad, and J.R. Chelikowsky, Phys. Rev. Lett. 90, 127401 (2003).
5. S. Ossicini et al., Appl. Phys. Lett, submitted.
6. M. Fujii, et al, Appl. Phys. Lett. 85, 1158 (2004).