First-principles calculation of interaction between interstitial O and As dopant in heavily As-doped Si

Journal of Applied Physics

Volumn 101, Issue 2, 2007, Pages

  Lu, Guang Hong ^a,c   Wang, Q ^b   Liu, Feng ^a  

^a UNIVERSITY OF UTAH   (United States)

^b FAIRCHILD SEMICONDUCTOR   (United States)

^c BEIHANG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; ELECTRON ENERGY LEVELS; ELECTRON TRAPS; OXYGEN; REACTION KINETICS; SILICON;

OI DIFFUSION; STRUCTURAL COMPLEXES; TOTAL-ENERGY CALCULATIONS;

HIGH ENERGY PHYSICS;

EID: 33847749480     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2423231     Document Type: Article

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