Investigation of the electronic structure of the phosphorus-doped Si and SiO2: Si quantum dots by XPS and HREELS methods

Surface and Interface Analysis

Volumn 36, Issue 8, 2004, Pages 959-962

  Kovalev, A I ^a   Wainstein, D L ^a   Tetelbaum, D I ^b   Hornig, W ^c   Kucherehko, Yu N ^d  

^a CNIICHERMET   (Russian Federation)

^b Physico Technical Research Institute   (Russian Federation)

^c B P E International Dr Hornig GmbH   (Germany)

^d INSTITUTE OF METAL PHYSICS   (Ukraine)

Author keywords

Electronic structure; HREELS; Quantum dots; Silicon; XPS

Indexed keywords

BAND GAP; CHEMICAL STATE; HREELS;

ANNEALING; DOPING (ADDITIVES); ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRONIC STRUCTURE; PHOSPHORUS; SEMICONDUCTOR QUANTUM DOTS; SILICA; X RAY PHOTOELECTRON SPECTROSCOPY;

SILICON;

EID: 4444280937     PISSN: 01422421     EISSN: None     Source Type: Journal    
DOI: 10.1002/sia.1811     Document Type: Conference Paper

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