Influence of gas phase chemistry on the properties of hydrogenated amorphous silicon and silicon-carbon alloys grown by HACVD

Thin Solid Films

Volumn 323, Issue 1-2, 1998, Pages 115-125

  Dieguez Campo, J M ^a   Lenski, M ^a   Comes, F J ^a  

^a GOETHE UNIVERSITY   (Germany)

Author keywords

Conductivity measurements; Gas phase parameters; Hydrogen assisted chemical vapour deposition; Phase transition; Raman measurements

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS SILICON; CHEMICAL VAPOR DEPOSITION; COMPOSITION EFFECTS; ELECTRIC CONDUCTIVITY MEASUREMENT; FOURIER TRANSFORM INFRARED SPECTROSCOPY; PHASE TRANSITIONS; RAMAN SPECTROSCOPY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

HYDROGEN ASSISTED CHEMICAL VAPOR DEPOSITION (HACVD);

AMORPHOUS ALLOYS;

EID: 0003203062     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(97)01046-8     Document Type: Article

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