The preparation of single-crystal 4H-SiC film by pulsed XeCl laser deposition

Thin Solid Films

Volumn 338, Issue 1-2, 1999, Pages 93-99

  Wang, Yuxia ^a   Wen, Jun ^a   Guo, Zhen ^a   Tang, Yeqing ^a   Tang, Honggao ^a   Wu, Jianxin ^a  

^a UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

Laser ablation; Semiconductors; Silicon carbide

Indexed keywords

ANNEALING; AUGER ELECTRON SPECTROSCOPY; CRYSTAL STRUCTURE; DEPOSITION; GAS LASERS; LASER ABLATION; SCANNING ELECTRON MICROSCOPY; SILICON CARBIDE; TRANSMISSION ELECTRON MICROSCOPY; VACUUM; X RAY CRYSTALLOGRAPHY; X RAY PHOTOELECTRON SPECTROSCOPY;

POST-DEPOSITION ANNEALING;

SEMICONDUCTING FILMS;

EID: 0032715303     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)01004-9     Document Type: Article

References (12)

1. J.B. Casdy, R.W. Johnson, Solid State Electron. 39 (10) (1996) 1409.
2. H. Morkoc, S. Strite, G.B. Gao, M.E. Lin, B. Sverdlov, M. Burns, J. Appl. Phys. 76 (3) (1994) 1363.
3. P.G. Neudeck, J. Electron. Mater. 24 (4) (1995) 283.
4. D. Dijkkamp, T. Venkatesan, X.D. Wu, S.A. Shaheen, N. Jisrawi, M. Lee, W.L. Mclean, M. Croft, Appl. Phys. Lett. 51 (1987) 619.
5. L. Rimai, R. Ager, E.M. Logothetis, W.H. Weber, J. Hangas, Appl. Phys. Lett. 59 (18) (1991) 2266.
6. T. Zehnder, A. Blatter, A. Bächli, Thin Solid Films 241 (1994) 138.
7. JCPDS Cards: 2-1441, 29-1127, 29-1126, 29-1130, 2-1464, 1-1119, 2-1050.
8. G.R. Bookev, R. Stickler, J. Appl. Phys. 33 (1962) 3281.
9. C.J. Mogab, H.J. Leamy, J. Appl. Phys. 45 (3) (1974) 1075.
10. H.J. Kim, R.F. Davis, J. Electronchem. Soc. 134 (9) (1987) 2269.
11. N.H. March, M. Parrinello, Collection Effects in Solid and Liquids, Vol. 4, Adam Hilger, Bristol, 1982.
12. V.I. Gavrilenko, A.V. Postniko, N.I. klyui, V.G. Litovchenko, Phys. Stat. Sol. (b) 162 (1990) 477.