Plasma and fluorocarbon-gas free Si dry etching process using a Cat-CVD system

Microelectronic Engineering

Volumn 51, Issue , 2000, Pages 495-503

  Izumi, Akira ^a   Sato, Hidekazu ^a   Hashioka, Shingi ^a   Kudo, Manabu ^a   Matsumura, Hideki ^a  

^a JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CATALYSIS; CHEMICAL VAPOR DEPOSITION; CONTAMINATION; CRYSTALLINE MATERIALS; DRY ETCHING; FLUORINE COMPOUNDS; HYDROGEN; SEMICONDUCTOR PLASMAS; SILICA; SUBSTRATES; TUNGSTEN; X RAY PHOTOELECTRON SPECTROSCOPY;

CRYSTALLINE SILICON; FLUOROCARBON; GAS PHASE ETCHING;

SEMICONDUCTING SILICON;

EID: 0033726819     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(99)00504-3     Document Type: Article

References (17)

1. Lou J.-C., Oldham W.G. J. Appl. Phys. 71:1992;3225.
2. Simko J.P., Oehrlein G.S., Mayer T.M. J. Electrochem. Soc. 138:1991;277.
3. Pankove J.I., Johnson N.M. Hydrogen in semiconductors. Willarrdson R.K., Beer A.C. Semiconductors & Semimetals. Vol. 34:1991;Academic Press, Inc, San Diego.
4. Bachrach R.Z., Bringans R.D. J. Vac. Sci. Technol. B1:1983;142.
5. Heya A., Masuda A., Matsumura H. Appl. Phys. Lett. 74:1999;2143.
6. Sugaya T., Kawabe M. Jpn. J. Appl. Phys. 30:1991;L402.
7. Okada Y., Shimomura H., Sugaya T., Kawabe M. Jpn. J. Appl. Phys. 30:1991;3774.
8. Chun Y.J., Sugaya T., Okada Y., Kawabe M. Jpn. J. Appl. Phys. 32:1993;L287.
9. Sasaki K., Takada T. Jpn. J. Appl. Phys. 37:1998;402.
10. Okada S., Matsumura H. Jpn. J. Appl. Phys. 36:1997;7035.
11. Matsumura H., Tachibana H. Appl. Phys. Lett. 47:1985;833.
12. Matsumura H. Jpn. J. Appl. Phys. 30:1994;L1522.
13. Izumi A., Matsumura H. Appl. Phys. Lett. 71:1997;1371.
14. A. Izumi, A. Masuda, S. Okada, H. Matsumura, Inst. Phys. Conf. Ser. No 155: Chapter 3, pp. 343-346, 1997.
15. Izumi A., Masuda A., Matsumura H. Thin Solid Films. 343-344:1999;528.
16. Sugaya T., Kawabe M. Jpn. J. Appl. Phys. 30:1991;L402.
17. Dufour G., Rochet F., Roulet H., Sirotti F. Surf. Sci. 304:1994;33.