Variable frequency microwave and convection furnace curing of polybenzoxazole buffer layer for GaAs HBT technology

IEEE Transactions on Semiconductor Manufacturing

Volumn 20, Issue 3, 2007, Pages 323-332

  Yota, Jiro ^a   Ly, Hoa ^a   Ramanathan, Ravi ^a   Sun, Hsiang Chih ^a   Barone, Dragana ^a   Nguyen, Thinh ^a   Katoh, Kohji ^b   Ohe, Masayuki ^b   Hubbard, Robert L ^c   Hicks, Keith ^c  

^a GaAs Technology   (United States)

^b HD Microsystems   (Japan)

^c Lambda Technologies   (United States)

Author keywords

Buffer layer; Convection curing; GaAs; Heterojunction bipolar transistor (HBT); Polybenzoxazole (PBO); Polymer; Variable frequency microwave (VFM) curing

Indexed keywords

BUFFER LAYERS; CURING; HETEROJUNCTION BIPOLAR TRANSISTORS; NATURAL CONVECTION; SEMICONDUCTING GALLIUM ARSENIDE;

CONVECTION CURING; POLYBENZOXAZOLE (PBO); VARIABLE FREQUENCY MICROWAVE (VFM) CURING;

MICROWAVES;

EID: 34547729663     PISSN: 08946507     EISSN: None     Source Type: Journal    
DOI: 10.1109/TSM.2007.901410     Document Type: Conference Paper

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