Comparison of electrical characteristics of 4H-SiC(0001) and (000-1) Schottky barrier diodes

Materials Science Forum

Volumn 527-529, Issue PART 2, 2006, Pages 927-930

  Nakamura, T ^a   Miyanagi, T ^a   Kamata, I ^a   Tsuchida, H ^a  

^a CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY   (Japan)

Author keywords

4H SiC 0001 ; Schottky barrier diode; Schottky barrier height; Yield

Indexed keywords

ELECTRIC PROPERTIES; ELECTRODEPOSITION; LEAKAGE CURRENTS; RAPID THERMAL ANNEALING; SILICON CARBIDE;

ANNEALING TEMPERATURE; ELECTRICAL CHARACTERISTICS; SCHOTTKY BARRIER HEIGHT;

SCHOTTKY BARRIER DIODES;

EID: 34547696623     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-425-1.927     Document Type: Conference Paper

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