Role of microstructure in electronic transport behavior of highly crystallized undoped microcrystalline Si Films

Thin Solid Films

Volumn 515, Issue 19 SPEC. ISS., 2007, Pages 7469-7474

  Ram, Sanjay K ^a   Kumar, Satyendra ^a   Roca i Cabarrocas, P ^b  

^a INDIAN INSTITUTE OF TECHNOLOGY KANPUR   (India)

^b LABORATOIRE DE PHYSIQUE DES INTERFACES ET DES COUCHES MINCES   (France)

Author keywords

Conductivity; Electrical properties and measurements; Electronic transport properties; Ellipsometry; Grain boundary; Silicon; Thin films

Indexed keywords

ACTIVATION ENERGY; CRYSTAL ORIENTATION; ELECTRIC CONDUCTIVITY; TRANSPORT PROPERTIES;

DARK CONDUCTIVITY; DEPOSITION PARAMETERS; FRACTIONAL COMPOSITION;

MICROCRYSTALLINE SILICON;

EID: 34547667138     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.01.003     Document Type: Article

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