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Journal of Non-Crystalline Solids

Volumn 299-302, Issue PART 1, 2002, Pages 355-359

Model of transport in microcrystalline silicon

(9) Kocka J a Stuchlikova H a Stuchlik J a Rezek, B a Mates, T a Svrcek V a Fojtik P a Pelant, I a Fejfar, A a

a INSTITUTE OF PHYSICS (Czech Republic)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; AGGREGATES; ATOMIC FORCE MICROSCOPY; CRYSTAL MICROSTRUCTURE; ELECTRIC CONDUCTIVITY; ELECTRON TRANSPORT PROPERTIES; SURFACE ROUGHNESS;

MICROCRYSTALLINE SILICON;

SEMICONDUCTING SILICON;

EID: 0036538972 PISSN: 00223093 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-3093(02)00931-6 Document Type: Conference Paper

Times cited : (54)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.