Modulated hall-effect techniques for the study of transport properties of microcrystalline silicon with different grain sizes

Materials Research Society Symposium - Proceedings

Volumn 420, Issue , 1996, Pages 789-794

  Hapke, P ^a   Backhausen, U ^a   Carius, R ^a   Finger, F ^a   Ray, S ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTALLINE MATERIALS; ELECTRON TRANSPORT PROPERTIES; ELECTRON TUNNELING; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; HALL EFFECT; RAMAN SPECTROSCOPY; TEMPERATURE; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

CRYSTALLINE VOLUME FRACTION; MICROCRYSTALLINE SILICON; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; THERMAL EMISSION;

SEMICONDUCTING SILICON;

EID: 0030407695     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-420-789     Document Type: Conference Paper

References (14)