Anisotropic carrier transport in preferentially oriented polycrystalline silicon films fabricated by very-high-frequency plasma enhanced chemical vapor deposition using fluorinated source gas

Journal of Non-Crystalline Solids

Volumn 266-269 A, Issue , 2000, Pages 341-346

  Nakahata, K ^a   Kamiya, T ^a   Fortmann, C M ^a   Shimizu, I ^a   Stuchlikova H ^b   Fejfar, A ^b   Kocka J ^b  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b INSTITUTE OF PHYSICS   (Czech Republic)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001640037     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0022-3093(99)00722-x     Document Type: Article

References (10)

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