Low-temperature LPCVD of Si nanocrystals from disilane and trisilane (Silcore®) embedded in ALD-alumina for non-volatile memory devices

Surface and Coatings Technology

Volumn 201, Issue 22-23 SPEC. ISS., 2007, Pages 9209-9214

  Brunets, I ^a   Aarnink, A A I ^a   Boogaard, A ^a   Kovalgin, A Y ^a   Wolters, R A M ^a   Holleman, J ^a   Schmitz, J ^a  

^a UNIVERSITY OF TWENTE   (Netherlands)

Author keywords

ALD; LPCVD; Nanocrystal; Non volatile memory; Silicon; Thin film; Trisilane

Indexed keywords

LOW PRESSURE CHEMICAL VAPOR DEPOSITION; LOW TEMPERATURE PROPERTIES; NANOCRYSTALS; NUCLEATION; OXIDATION; SUBSTRATES; THIN FILMS;

DISILANE; FLOATING-GATE CAPACITOR STRUCTURES; NON-VOLATILE MEMORY; TRISILANE;

NANOCRYSTALLINE SILICON;

LOW PRESSURE CHEMICAL VAPOR DEPOSITION; LOW TEMPERATURE PROPERTIES; NANOCRYSTALLINE SILICON; NANOCRYSTALS; NUCLEATION; OXIDATION; SUBSTRATES; THIN FILMS;

EID: 34547660645     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2007.03.035     Document Type: Article

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