A study of growth mechanism of microcrystalline thin silicon films deposited at low temperature by SiF4-H2-He PECVD

EPJ Applied Physics

Volumn 26, Issue 3, 2004, Pages 187-192

  Losurdo, M ^a   Giangregorio, M ^a   Grimaldi, A ^a   Capezzuto, P ^a   Bruno, G ^a  

^a UNIVERSITY OF BARI   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; CRYSTAL ORIENTATION; CRYSTALLINE MATERIALS; DEPOSITION; ELLIPSOMETRY; ETCHING; MORPHOLOGY; PHASE TRANSITIONS; REACTION KINETICS; SEMICONDUCTING SILICON; SPECTROSCOPY; THERMAL EFFECTS;

AMORPHOUS INCUBATION LAYERS; CRYSTALLINE ORIENTATION AND STRUCTURE; OPTICAL METHODS; SPECTROSCOPIC ELLIPSOMETRY;

THIN FILMS;

EID: 3042602205     PISSN: 12860042     EISSN: None     Source Type: Journal    
DOI: 10.1051/epjap:2004032     Document Type: Article

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