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Volumn 80-81, Issue , 2001, Pages 237-242
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Highly crystalline intrinsic microcrystalline silicon films using SiF4/Ar/H2 glow discharge plasma
a a a a a a a |
Author keywords
Microcrystalline silicon; Plasma deposition; Spectroscopic ellipsometry (SE); Thin film transistor
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Indexed keywords
ACTIVATION ENERGY;
CRYSTAL GROWTH;
ELECTRIC CONDUCTIVITY MEASUREMENT;
ELECTRON MOBILITY;
ELLIPSOMETRY;
GRAIN SIZE AND SHAPE;
PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;
RAMAN SPECTROSCOPY;
SURFACE ROUGHNESS;
X RAY DIFFRACTION ANALYSIS;
SILICON TETRAFLUORIDE;
TIME RESOLVED MICROWAVE CONDUCTIVITY;
SILICON;
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EID: 0034831964
PISSN: 10120394
EISSN: None
Source Type: Book Series
DOI: None Document Type: Conference Paper |
Times cited : (18)
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References (18)
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