Effect of deposition conditions and dielectric plasma treatments on the electrical properties of microcrystalline silicon TFTs

Thin Solid Films

Volumn 427, Issue 1-2, 2003, Pages 67-70

  Kasouit, S ^a,b   Roca i Cabarrocas, P ^a   Vanderhaghen, R ^a   Bonassieux, Y ^a   Elyaakoubi, M ^b   French, I ^c   Rocha, J ^b   Vitoux, B ^b  

^a LABORATOIRE DE PHYSIQUE DES INTERFACES ET DES COUCHES MINCES   (France)

^b Unaxis Displays Division France SAS   (France)

^c PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

Microcrystalline silicon; Silicon nitride; Stability; Thin film transistors

Indexed keywords

AMORPHOUS SILICON; CRYSTALLINE MATERIALS; CRYSTALLIZATION; DEPOSITION; DIELECTRIC MATERIALS; ELECTRON MOBILITY; GRAIN SIZE AND SHAPE; KINETIC THEORY; PLASMA APPLICATIONS; RAMAN SPECTROSCOPY; SILICON NITRIDE;

PLASMA TREATMENTS;

THIN FILM TRANSISTORS;

EID: 0037416733     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(02)01247-6     Document Type: Conference Paper

References (8)

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