Effect of P-induced gettering on extended defects in n-type multicrystalline silicon

Progress in Photovoltaics: Research and Applications

Volumn 15, Issue 5, 2007, Pages 375-386

  Acciarri, M ^a   Binetti, S ^a   Le Donne, A ^a   Marchionna, S ^a   Vimercati, M ^a   Libal, J ^b   Kopecek, R ^b   Wambach, K ^c  

^a UNIVERSITY OF MILANO BICOCCA   (Italy)

^b UNIVERSITY OF KONSTANZ   (Germany)

^c Deutsche Solar AG   (Germany)

Author keywords

EBIC; Gettering; Lifetime; Multicrystalline silicon; Solar cells

Indexed keywords

CRYSTAL DEFECTS; ELECTRIC PROPERTIES; PHOTOLUMINESCENCE SPECTROSCOPY; POLYCRYSTALLINE MATERIALS; SOLAR CELLS;

DEEPEST SINKS; EBIC TECHNIQUES; GETTERING; LIFETIME; MULTICRYSTALLINE SILICON;

SEMICONDUCTING SILICON;

EID: 34547538182     PISSN: 10627995     EISSN: 1099159X     Source Type: Journal    
DOI: 10.1002/pip.744     Document Type: Article

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