Investigation of defects in the edge region of multicrystalline solar silicon ingots

Solid State Phenomena

Volumn 108-109, Issue , 2005, Pages 531-538

  Rossberg, M ^a   Naumann, M ^a   Irmscher, K ^a   Juda, U ^a   Ludge A ^a   Ghosh, M ^b   Muller A ^b  

^a LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

^b Deutsche Solar AG   (Germany)

Author keywords

FTIR; Laser scattering tomography; Lateral photovoltage scanning; Multicrystalline Silicon; PCD

Indexed keywords

CARRIER CONCENTRATION; CARRIER LIFETIME; GRAIN BOUNDARIES; INGOTS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR LASERS; SILICON; TOMOGRAPHY;

DISTRIBUTION OF DISLOCATIONS; FTIR; HORIZONTAL TEMPERATURE GRADIENT; LASER SCATTERING TOMOGRAPHIES; MULTI-CRYSTALLINE SILICON; PHOTO-VOLTAGE; PHOTOCONDUCTIVITY DECAY; STRUCTURAL AND ELECTRICAL PROPERTIES;

FOURIER TRANSFORM INFRARED SPECTROSCOPY;

EID: 34547500380     PISSN: 10120394     EISSN: 16629779     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/SSP.108-109.531     Document Type: Conference Paper

References (6)

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5. Properties of Crystalline Silicon (INSPEC, IEE, London, UK, 1999, edited by R.Hull)
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