Scanning techniques applied to the characterisation of P and N type multicrystalline silicon

Materials Science in Semiconductor Processing

Volumn 9, Issue 1-3, 2006, Pages 230-235

  Martinuzzi, S ^a   Palais, O ^a   Ostapenko, S ^b  

^a AIX MARSEILLE UNIVERSITY   (France)

^b UNIVERSITY OF SOUTH FLORIDA   (United States)

Author keywords

Defects and impurities in crystals; Diffusion length; Elemental semiconductors; Lifetime; Multicrystalline silicon; Photoluminescence scan maps

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL IMPURITIES; CRYSTALLOGRAPHY; ELECTRIC PROPERTIES; GRAIN BOUNDARIES; HEAVY METALS; PHOTOLUMINESCENCE;

DEFECTS AND IMPURITIES IN CRYSTALS; DIFFUSION LENGTH; ELEMENTAL SEMICONDUCTORS; LIFETIME; MULTICRYSTALLINE SILICON; PHOTOLUMINESCENCE SCAN MAPS;

SILICON WAFERS;

EID: 33744508595     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2006.01.079     Document Type: Article

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