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Volumn 85, Issue 19, 2004, Pages 4472-4474

Experimental evidence for the presence of segregation and relaxation gettering of iron in polycrystalline silicon layers on silicon

(3) Istratov, A A a Huber, W b Weber, E H c

a UNIVERSITY OF CALIFORNIA (United States)

b Sumitomo Mitsubishi Silicon (United States)

c Lawrence Berkeley National Laboratory (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION-LIMITED GETTERING; POLYCRYSTALLINE SILICON LAYERS; RELAXATION GETTERING; SEGREGATION GETTERING;

ANNEALING; DIFFUSION; ESTIMATION; IRON; POLYCRYSTALLINE MATERIALS; RELAXATION PROCESSES; SECONDARY ION MASS SPECTROMETRY; SEGREGATION (METALLOGRAPHY);

POLYSILICON;

EID: 10844269844 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1819512 Document Type: Conference Paper

Times cited : (37)

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