Base doping and recombination activity of impurities in crystalline silicon solar cells

Progress in Photovoltaics: Research and Applications

Volumn 12, Issue 4, 2004, Pages 309-316

  Geerligs, L J ^a   Macdonald, D ^b  

^a TNO   (Netherlands)

^b AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

Base; Doping; Recombination; Resistivity; Silicon

Indexed keywords

CRYSTAL IMPURITIES; CRYSTALLINE MATERIALS; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; IRON; MATHEMATICAL MODELS; OPTIMIZATION; SILICON;

BACK-SURFACE FIELDS (BSF); BASE; RECOMBINATION;

SOLAR CELLS;

EID: 2942621025     PISSN: 10627995     EISSN: None     Source Type: Journal    
DOI: 10.1002/pip.546     Document Type: Article

References (21)

1. Brody J, Rohatgi A, Yelundur V. Bulk resistivity optimization for low-bulk-lifetime silicon solar cells. Progress in Photovoltaics; Research and Applications 2001; 9(4): 273-285.
2. Bothe K, Schmidt J, Hezel R. Comprehensive analysis of the impact of boron and oxygen on the metastable defect in Cz-silicon. Proceeding of the 3rd World Conference on Photovoltaic Energy Conversion, Osaka, Japan, 11-18 May 2003; 927-930.
3. Dhamrin M, Akihide T, Hashigami H, Saitoh T. Light-induced lifetime degradation of commercial multicrystalline silicon wafers. Proceedings of the 29th IEEE Photovoltaic Specialists Conference 2002; 395-398.
4. Damiani BM. Light induced degradation in promising multi-crystalline silicon materials and cells. Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion, Osaka, Japan, 11-13 May, 2003; 927-930.
5. Macdonald DH, Geerligs LJ, Riepe S. Light-induced lifetime degradation in multicrystalline silicon. 13th Workshop on Crystalline Silicon Solar Cell Materials and Processes. Extended Papers and Abstracts. NREL: Golden, 2002; 182-285.
6. Sopori BL, Jastrzebski L, Tan T. A comparison of gettering in single- and multicrystalline silicon for solar cells. Proceedings of the 25th IEEE Photovoltaic Specialists Conference 1996; 119-122.
7. Geerligs LJ. Impact of defect distribution and impurities on multicrystalline silicon solar cell efficiency. Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion, Osaka, Japan, 11-13 May 2003; 1044-1047.
8. Blakemore JS. Semiconductor Statistics. International Series of Monographs on Semiconductors, Vol. 3. Pergamon Press: Oxford, 1962.
9. Samudra G et al. High-field electron transport for ellipsoidal multivalley band structure of silicon. Journal of Applied Physics 1992; 72(10): 4700-4704.
10. Istratov A, Hieslmair H, Weber ER. Applied Physics 1999; A 69: 13. Macdonald D, Cuevas A, Wong-Leung J. Journal of Applied Physics 2001; 89(12): 7932.
11. Istratov A, Hieslmair H, Weber ER. Applied Physics 1999; A 69: 13. Macdonald D, Cuevas A, Wong-Leung J. Journal of Applied Physics 2001; 89(12): 7932.
12. Ballif C et al. Lifetime investigations of degradation effects in processed multicrystalline silicon wafers. Proceedings of the 17th European Photovoltaic Solar Energy Conference, Munich, 2002; 1818-1821. Geerligs LJ. Multicrystalline silicon: relation between ingot quality and cell efficiency. 12th Workshop on Crystalline Silicon Solar Cell Materials and Processes. Extended Papers and Abstracts. NREL: Golden, 2002; 288-292.
13. Ballif C et al. Lifetime investigations of degradation effects in processed multicrystalline silicon wafers. Proceedings of the 17th European Photovoltaic Solar Energy Conference, Munich, 2002; 1818-1821. Geerligs LJ. Multicrystalline silicon: relation between ingot quality and cell efficiency. 12th Workshop on Crystalline Silicon Solar Cell Materials and Processes. Extended Papers and Abstracts. NREL: Golden, 2002; 288-292.
14. Schönecker A, Geerligs LJ, Müller A. Casting technologies for solar silicon wafers: block casting and ribbon-growth-on substrate. Solid State Phenomena 2004; 95-96: 149-158.
15. Rein S, Glunz SW. Electronic properties of the metastable defect in boron-doped Czochralski silicon: unambiguous determination by advanced lifetime spectroscopy. Applied Physics Letters 2003; 82: 1054-1056.
16. Kerr MJ, Cuevas A. Journal of Applied Physics 2002; 91: 2473.
17. D= 4.5 μm - is used because this fits the experimental internal quantum efficiency curves better.
18. Basore P, Clugston DA. PC1D v.5-5. University of New South Wales, 2000.
19. Cuevas A et al. Millisecond minority carrier lifetimes in n-type multicrystalline silicon. Applied Physics Letters 2002; 81(26): 4952-4954.
20. Libal J et al. Properties of n-type multicrystalline silicon: lifetime, gettering and H-passivation. Accepted for presentation at the 19th European Photovoltaic Solar Energy Conference, Paris, 7-11 June 2004.
21. Macdonald DH, Geerligs LJ. Recombination Activity of Iron and Other Transition Metals in p- and n-type Crystaline Silicon. Accepted for presentation at the 19th European Photovoltaic Solar Energy Conference, Paris, 7-11 June 2004.