The origin of photoluminescence from oxygen precipitates nucleated at low temperature in semiconductor silicon

Journal of the Electrochemical Society

Volumn 151, Issue 12, 2004, Pages

  Leoni, E ^a   Martinelli, L ^a   Binetti, S ^a   Borionetti, G ^b   Pizzini, S ^a  

^a UNIVERSITY OF MILANO BICOCCA   (Italy)

^b MEMC Electronic Materials SpA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

LOW TEMPERATURE EFFECTS; NUCLEATION; OXYGEN; PRECIPITATION (CHEMICAL); SEMICONDUCTING SILICON COMPOUNDS; SPECTROSCOPIC ANALYSIS;

NUCLEATION PROCESS; OXYGEN CONCENTRATION; OXYGEN PRECIPITATES; PHOTOLUMINESCENCE (PL) MEASUREMENTS;

PHOTOLUMINESCENCE;

EID: 10844252382     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1817772     Document Type: Article

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