First-principles investigation of the structure, energetics, and electronic properties of Ru/HfO 2 interfaces

Journal of Physical Chemistry C

Volumn 111, Issue 26, 2007, Pages 9203-9210

  Mukhopadhyay, Atashi B ^a   Sanz, Javier Fdez ^a,b   Musgrave, Charles B ^a  

^a Stanford University   (United States)

^b UNIVERSITY OF SEVILLE   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

GATE ELECTRODES; INTERFACIAL LAYERS; METAL INDUCED GAP STATES;

CHARGE TRANSFER; DENSITY FUNCTIONAL THEORY; ELECTRONIC PROPERTIES; EPITAXIAL FILMS; GATE DIELECTRICS; MOS DEVICES;

ELECTROCHEMICAL ELECTRODES;

EID: 34547413448     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp0684325     Document Type: Article

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