Electrical properties in high-k HfO2 capacitors with an equivalent oxide thickness of 9 Å on ru metal electrode

Electrochemical and Solid-State Letters

Volumn 8, Issue 6, 2005, Pages

  Kim, Jeon Ho ^a   Yoon, Soon Gil ^a   Yeom, Seung Jin ^b   Woo, Hyun Kyung ^b   Kil, Deok Sin ^b   Roh, Jae Sung ^b   Sohn, Hyun Chul ^b  

^a Chungnam National University   (South Korea)

^b Hynix Semiconductor Inc   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITORS; ELECTRIC PROPERTIES; ELECTRODES; EQUIVALENT CIRCUITS; HEAT TREATMENT; OXIDES; PERMITTIVITY; RUTHENIUM; TEMPERATURE DISTRIBUTION; THICKNESS MEASUREMENT; THIN FILMS;

ANNEALING TEMPERATURE; ATOMIC LAYER DEPOSITION; ELECTRICAL PROPERTIES; METAL ELECTRODES;

HAFNIUM COMPOUNDS;

EID: 20844437461     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1895285     Document Type: Article

References (4)

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