Measurement of generation parameters on Ru/HfO2/Si MOS capacitor

Solid-State Electronics

Volumn 50, Issue 2, 2006, Pages 177-180

  Tapajna M ^a,b   Harmatha, L ^b   Husekova K ^a  

^a INSTITUTE OF ELECTRICAL ENGINEERING   (Slovakia)

^b SLOVAK UNIVERSITY OF TECHNOLOGY   (Slovakia)

Author keywords

CMOS technology; Generation lifetime; High oxides; Metal organic chemical vapour deposition; Surface generation velocity

Indexed keywords

ANNEALING; CAPACITANCE; CMOS INTEGRATED CIRCUITS; HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOS CAPACITORS; SILICON; SURFACE PROPERTIES; VELOCITY MEASUREMENT;

CMOS TECHNOLOGY; GENERATION LIFETIME; SURFACE GENERATION VELOCITY;

RUTHENIUM COMPOUNDS;

EID: 32344449137     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2005.12.002     Document Type: Article

References (9)

1. D.K. Schroder Semiconductors material and device characterization Second ed. 1998 Wiley New York
2. 3 gate dielectric capacitor J Appl Phys 95 2004 5602 5607
3. De Gendt S, Brunco D, Caymax M, Conard T, Date L, Delabie A, et al. High-k gate stack engineering-towards meeting low standby power and high performance targets. In: Advanced gate stack, source/drain, and channel engineering for Si-based CMOS: new materials, processes, and equipment. Gusev EP, Chen LJ, Kwong D-L, Timans PJ, Roozeboom F, Öztürk MC, Iwai H (editors). ECS Meeting, Quebeck City: The Electrochemic Society Inc; 2005. 109-17.
4. 2 gate electrodes for advanced CMOS technology Mat Sci Eng 109 2004 117 121
5. Hauser JR, Ahmed K. Characterization of ultra-thin oxides using electrical C-V and I-V measurements. In: Proc AIP Conf, 1998;449:235-9.
6. E.H. Niccolian, and J.R. Brews MOS (metal oxide semiconductor) physics and technology 1982 Wiley New York
7. 2 Appl Phys Lett 82 2003 4074 4076
8. 2 interfaces Phys Rev Lett 80 1998 5176 5179
9. 2-based/polycrystalline-Si gate stack Appl Phys Lett 83 2003 533 535