Consideration of the actual current-spreading length of gaN-based light-emitting diodes for high-efficiency design

IEEE Journal of Quantum Electronics

Volumn 43, Issue 8, 2007, Pages 625-632

  Kim, Hyunsoo ^a   Cho, Jaehee ^a   Lee, Jeong Wook ^a   Yoon, Sukho ^a   Kim, Hyungkun ^a   Sone, Cheolsoo ^a   Park, Yongjo ^a   Seong, Tae Yeon ^b  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^b Korea University   (South Korea)

Author keywords

Current crowding; Design; GaN; Light emitting diode (LED); Reflector

Indexed keywords

CURRENT CROWDING; CURRENT SPREADING; HYBRID REFLECTORS; THERMAL HEATING;

CONTACT RESISTANCE; CURRENT DENSITY; ELECTRIC POTENTIAL; GALLIUM NITRIDE; MIRRORS; SEMICONDUCTOR JUNCTIONS;

LIGHT EMITTING DIODES;

EID: 34547129822     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2007.900262     Document Type: Article

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