Low resistance and highly reflective Cu-Ni solid solution/Ag ohmic contacts to p-GaN for flip-chip light emitting diodes

Physica Status Solidi (A) Applied Research

Volumn 201, Issue 12, 2004, Pages 2823-2826

  Leem, Dong Seok ^a   Song, June O ^a   Kwak, J S ^b   Cho, J ^b   Kim, H ^b   Nam, O H ^b   Park, Y ^b   Seong, Tae Yeon ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC RESISTANCE; FLIP CHIP DEVICES; LIGHT EMITTING DIODES; NICKEL; OHMIC CONTACTS; REFLECTION; AUGER ELECTRON SPECTROSCOPY; GALLIUM NITRIDE; LITHOGRAPHY; MICROSCOPES; SOLID SOLUTIONS;

LIGHT EXTRACTION; SEMI-TRANSPARENT METAL CONTACTS; SOLID-STATE LIGHTING; AUGER MICROSCOPES; CONTACT RESISTANCES; FORWARD-BIAS VOLTAGES; METAL ELECTRODES;

COPPER; LIGHT EMITTING DIODES;

EID: 6344276787     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssa.200405003     Document Type: Conference Paper

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