Device and circuit modeling of GaN/InGaN light emitting diodes (LEDs) for optimum current spreading

Solid-State Electronics

Volumn 47, Issue 10, 2003, Pages 1817-1823

  Ebong, A ^a   Arthur, S ^a   Downey, E ^a   Cao, X A ^a   LeBoeuf, S ^a   Merfeld, D W ^a  

^a GE GLOBAL RESEARCH   (United States)

Author keywords

Aimspice; Current spreading; GaN InGaN; Light emitting diode; Modeling

Indexed keywords

ELECTRIC RESISTANCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS;

AIMSPICE DEVICE;

LIGHT EMITTING DIODES;

EID: 0043094098     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(03)00139-4     Document Type: Conference Paper

References (9)

1. Eliashevich I., Li Y., Osinsky A., Tran C.A., Brown M.G., Karlicek R.F. Jr. Part of the SPIE conference on light-emitting diodes. Proc. SPIE. 3621:1999;28.
2. Kim H., Lee J.M., Huh C., Kim S.W., Kim D.J., Park S.J.et al. Appl. Phys. Lett. 77(12):2000;1903.
3. Guo X., Schubert E.F. Appl. Phys. Lett. 78(21):2001;3337.
4. Guo X., Schubert E.F. J. Appl. Phys. 90(8):2001;4191.
5. Kim H., Park S.J., Hwang H., Park N.M. Appl. Phys. Lett. 81(7):2002;1326.
6. Cao X.A., Stokes E.B., Sandvick P., Taskar N., Kretchmer J., Walker D. Solid State Electron. 46:2002;1235.
7. Ebong A., Arthur S., Downey E., Stokes E.B., Cao X.A., LeBoeuf S.et al. Part of SPIE conference on solid state lighting II. Proc. SPIE. 4776:2002;187.
8. Fjedly T.A., Ytterdal T., Shur M. Introduction to device modeling and circuit simulation. 1998;John Wiley & Sons, Inc.
9. Vurgaftman I, Meyer JR, Ram-Mohan LR. 2001;89:5815.