Design and fabrication of highly efficient GaN-based light-emitting diodes

IEEE Transactions on Electron Devices

Volumn 49, Issue 10, 2002, Pages 1715-1722

  Kim, Hyunsoo ^b   Park, Seong Ju ^b   Hwang, Hyunsang ^a,b  

^a Kwangju Institute of Science and Technology ^*

^b Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

Current spreading; GaN; Geometrical design; Light emitting diode; Model

Indexed keywords

ELECTRODES; GALLIUM NITRIDE; INDUCTIVELY COUPLED PLASMA; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PROPERTIES; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

CURRENT SPREADING PHENOMENON; INDIUM GALLIUM NITRIDE MULTIPLE QUANTUM WELL; P-TYPE CURRENT SPREADER; TRANSPARENT ELECTRODE;

LIGHT EMITTING DIODES;

EID: 0036773102     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2002.802625     Document Type: Article

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