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Volumn 81, Issue 7, 2002, Pages 1326-1328
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Lateral current transport path, a model for GaN-based light-emitting diodes: Applications to practical device designs
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Author keywords
[No Author keywords available]
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Indexed keywords
CURRENT SPREADING;
DEVICE DESIGN;
DEVICE GEOMETRIES;
DEVICE PARAMETERS;
EXPONENTIAL BEHAVIORS;
GAN-BASED LIGHT-EMITTING DIODES;
INTERDIGITATED STRUCTURE;
LATERAL CURRENTS;
LATERAL LENGTH;
LATERAL RESISTANCE;
N-TYPE LAYERS;
THEORETICAL CALCULATIONS;
TRANSPARENT ELECTRODE;
UNIFORM CURRENT DISTRIBUTION;
DENSITY FUNCTIONAL THEORY;
DESIGN;
GALLIUM ALLOYS;
GALLIUM NITRIDE;
LIGHT EMISSION;
LIGHT EMITTING DIODES;
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EID: 79956029939
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.1499994 Document Type: Article |
Times cited : (79)
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References (7)
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