Lateral current transport path, a model for GaN-based light-emitting diodes: Applications to practical device designs

Applied Physics Letters

Volumn 81, Issue 7, 2002, Pages 1326-1328

  Kim, Hyunsoo ^a   Park, Seong Ju ^a   Hwang, Hyunsang ^a   Park, Nae Man ^b  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT SPREADING; DEVICE DESIGN; DEVICE GEOMETRIES; DEVICE PARAMETERS; EXPONENTIAL BEHAVIORS; GAN-BASED LIGHT-EMITTING DIODES; INTERDIGITATED STRUCTURE; LATERAL CURRENTS; LATERAL LENGTH; LATERAL RESISTANCE; N-TYPE LAYERS; THEORETICAL CALCULATIONS; TRANSPARENT ELECTRODE; UNIFORM CURRENT DISTRIBUTION;

DENSITY FUNCTIONAL THEORY; DESIGN; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMISSION;

LIGHT EMITTING DIODES;

EID: 79956029939     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1499994     Document Type: Article

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